SCTWA50N120

SICFET N-CH 1200V 65A HIP247
NOVA Part#:
312-2291915-SCTWA50N120
Manufacturer:
Manufacturer Part No:
SCTWA50N120
Standard Package:
600
Technical Datasheet:

N-Channel 1200 V 65A (Tc) 318W (Tc) Through Hole HiP247™

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
RoHS 1
Operating Temperature -55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package HiP247™
Base Product Number SCTWA50
TechnologySiCFET (Silicon Carbide)
Series-
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs 69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 20 V
FET Feature-
Package / CaseTO-247-3
Vgs (Max)+25V, -10V
FET TypeN-Channel
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 400 V
Power Dissipation (Max) 318W (Tc)
Other NamesSCTWA50N120-ND
497-SCTWA50N120
-1138-SCTWA50N120
497-18637
497-18637-ND

In stock Please contact us

Not the price you want? Fill the forms and we'll contact you ASAP.