BSP149H6327XTSA1
MOSFET N-CH 200V 660MA SOT223-4
NOVA Part#:
312-2281368-BSP149H6327XTSA1
Manufacturer:
Manufacturer Part No:
BSP149H6327XTSA1
Standard Package:
1,000
Technical Datasheet:
N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-SOT223-4 | |
| Base Product Number | BSP149 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | SIPMOS® | |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V | |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 400µA | |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V | |
| FET Feature | Depletion Mode | |
| Package / Case | TO-261-4, TO-261AA | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 200 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Other Names | SP001058818 BSP149H6327XTSA1CT BSP149H6327XTSA1DKR BSP149H6327XTSA1TR |
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