SIHD12N50E-GE3
MOSFET N-CH 550V 10.5A DPAK
NOVA Part#:
312-2264425-SIHD12N50E-GE3
Manufacturer:
Manufacturer Part No:
SIHD12N50E-GE3
Standard Package:
3,000
Technical Datasheet:
N-Channel 550 V 10.5A (Tc) 114W (Tc) Surface Mount D-Pak
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 150°C (TA) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D-Pak | |
| Base Product Number | SIHD12 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | E | |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Vgs (Max) | ±30V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 550 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 886 pF @ 100 V | |
| Power Dissipation (Max) | 114W (Tc) | |
| Other Names | SIHD12N50E-GE3CT SIHD12N50E-GE3TRINACTIVE SIHD12N50E-GE3DKR-ND SIHD12N50E-GE3DKRINACTIVE SIHD12N50E-GE3DKR SIHD12N50E-GE3TR-ND SIHD12N50E-GE3CT-ND SIHD12N50E-GE3TR |
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