FQT4N20LTF

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	onsemi
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223-4
Base Product Number	FQT4N20
Technology	MOSFET (Metal Oxide)
Series	QFET®
Current - Continuous Drain (Id) @ 25°C	850mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	1.35Ohm @ 425mA, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.2 nC @ 5 V
FET Feature	-
Package / Case	TO-261-4, TO-261AA
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	310 pF @ 25 V
Power Dissipation (Max)	2.2W (Tc)
Other Names	FQT4N20LTFDKR FAIFSCFQT4N20LTF FQT4N20LTF-ND FQT4N20LTFTR FQT4N20LTFCT 2156-FQT4N20LTF-OS