BSH108,215

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MOSFET N-CH 30V 1.9A TO236AB

NOVA Part#:

312-2284567-BSH108,215

Manufacturer:

Manufacturer Part No:

BSH108,215

Standard Package:

3,000

Technical Datasheet:

N-Channel 30 V 1.9A (Tc) 830mW (Tc) Surface Mount TO-236AB

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Nexperia USA Inc.
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Base Product Number	BSH108
Technology	MOSFET (Metal Oxide)
Series	TrenchMOS™
Current - Continuous Drain (Id) @ 25°C	1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	120mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
FET Feature	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	190 pF @ 10 V
Power Dissipation (Max)	830mW (Tc)
Other Names	568-6216-1 568-6216-2 1727-4925-6 934055571215 BSH108 T/R BSH108,215-ND 568-6216-1-ND 1727-4925-2 1727-4925-1 BSH108215 BSH108 T/R-ND 568-6216-6 568-6216-2-ND 568-6216-6-ND