SI4090BDY-T1-GE3
N-CHANNEL 100-V (D-S) MOSFET SO-
NOVA Part#:
312-2296312-SI4090BDY-T1-GE3
Manufacturer:
Manufacturer Part No:
SI4090BDY-T1-GE3
Standard Package:
2,500
Technical Datasheet:
N-Channel 100 V 12.2A (Ta), 18.7A (Tc) 3.1W (Ta), 7.4W (Tc) Surface Mount 8-SOIC
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOIC | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® | |
| Current - Continuous Drain (Id) @ 25°C | 12.2A (Ta), 18.7A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 12.2A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3570 pF @ 50 V | |
| Power Dissipation (Max) | 3.1W (Ta), 7.4W (Tc) | |
| Other Names | 742-SI4090BDY-T1-GE3DKR 742-SI4090BDY-T1-GE3TR 742-SI4090BDY-T1-GE3CT |
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