SIJ188DP-T1-GE3
MOSFET N-CH 60V 25.5A/92.4A PPAK
NOVA Part#:
312-2290324-SIJ188DP-T1-GE3
Manufacturer:
Manufacturer Part No:
SIJ188DP-T1-GE3
Standard Package:
3,000
Technical Datasheet:
N-Channel 60 V 25.5A (Ta), 92.4A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® SO-8 | |
| Base Product Number | SIJ188 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® Gen IV | |
| Current - Continuous Drain (Id) @ 25°C | 25.5A (Ta), 92.4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 3.85mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | PowerPAK® SO-8 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1920 pF @ 30 V | |
| Power Dissipation (Max) | 5W (Ta), 65.7W (Tc) | |
| Other Names | SIJ188DP-T1-GE3TR SIJ188DP-T1-GE3DKR SIJ188DP-T1-GE3CT |
In stock Please contact us
Not the price you want? Fill the forms and we'll contact you ASAP.
We found other products you might like!
MMUN2233LT1Gonsemi
SIR180DP-T1-RE3Vishay Siliconix
BAT46WJ,115Nexperia USA Inc.
STPS5H100AFSTMicroelectronics