SI7119DN-T1-E3

MOSFET P-CH 200V 3.8A PPAK1212-8
NOVA Part#:
312-2290389-SI7119DN-T1-E3
Manufacturer:
Manufacturer Part No:
SI7119DN-T1-E3
Standard Package:
3,000
Technical Datasheet:

P-Channel 200 V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package PowerPAK® 1212-8
Base Product Number SI7119
TechnologyMOSFET (Metal Oxide)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
FET Feature-
Package / CasePowerPAK® 1212-8
Vgs (Max)±20V
FET TypeP-Channel
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 50 V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Other NamesSI7119DN-T1-E3CT
SI7119DNT1E3
SI7119DN-T1-E3TR
SI7119DN-T1-E3DKR

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