IPB60R080P7ATMA1
MOSFET N-CH 650V 37A D2PAK
NOVA Part#:
312-2292311-IPB60R080P7ATMA1
Manufacturer:
Manufacturer Part No:
IPB60R080P7ATMA1
Standard Package:
1,000
Technical Datasheet:
N-Channel 650 V 37A (Tc) 129W (Tc) Surface Mount PG-TO263-3
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3 | |
| Base Product Number | IPB60R080 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | CoolMOS™ P7 | |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 11.8A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 590µA | |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2180 pF @ 400 V | |
| Power Dissipation (Max) | 129W (Tc) | |
| Other Names | IPB60R080P7ATMA1TR IPB60R080P7ATMA1-ND IPB60R080P7 SP001664898 IFEINFIPB60R080P7ATMA1 IPB60R080P7ATMA1DKR 2156-IPB60R080P7ATMA1 IPB60R080P7ATMA1CT |
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