SIJ186DP-T1-GE3
MOSFET N-CH 60V 23A/79.4A PPAK
NOVA Part#:
312-2263327-SIJ186DP-T1-GE3
Manufacturer:
Manufacturer Part No:
SIJ186DP-T1-GE3
Standard Package:
3,000
Technical Datasheet:
N-Channel 60 V 23A (Ta), 79.4A (Tc) 5W (Ta), 57W (Tc) Surface Mount PowerPAK® SO-8
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Siliconix | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PowerPAK® SO-8 | |
| Base Product Number | SIJ186 | |
| Technology | MOSFET (Metal Oxide) | |
| Series | TrenchFET® Gen IV | |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 79.4A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 15A, 10V | |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | |
| FET Feature | - | |
| Package / Case | PowerPAK® SO-8 | |
| Vgs (Max) | ±20V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 30 V | |
| Power Dissipation (Max) | 5W (Ta), 57W (Tc) | |
| Other Names | SIJ186DP-T1-GE3DKR SIJ186DP-T1-GE3CT SIJ186DP-T1-GE3TR |
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