SIHP20N50E-GE3

MOSFET N-CH 500V 19A TO220AB
NOVA Part#:
312-2278387-SIHP20N50E-GE3
Manufacturer:
Manufacturer Part No:
SIHP20N50E-GE3
Standard Package:
1,000
Technical Datasheet:

N-Channel 500 V 19A (Tc) 179W (Tc) Through Hole TO-220AB

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
RoHS 1
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-220AB
Base Product Number SIHP20
TechnologyMOSFET (Metal Oxide)
Series-
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs 184mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V
FET Feature-
Package / CaseTO-220-3
Vgs (Max)±30V
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 100 V
Power Dissipation (Max) 179W (Tc)

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