BSM180C12P3C202

SICFET N-CH 1200V 180A MODULE
NOVA Part#:
312-2275707-BSM180C12P3C202
Manufacturer:
Manufacturer Part No:
BSM180C12P3C202
Standard Package:
12
Technical Datasheet:

N-Channel 1200 V 180A (Tc) 880W (Tc) Chassis Mount Module

More Information
CategoryTransistors - FETs, MOSFETs - Single
ManufacturerRohm Semiconductor
RoHS 1
Operating Temperature -40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device Package Module
Base Product Number BSM180
TechnologySiCFET (Silicon Carbide)
Series-
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 5.6V @ 50mA
FET Feature-
Package / CaseModule
Vgs (Max)+22V, -4V
FET TypeN-Channel
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 10 V
Power Dissipation (Max) 880W (Tc)
Other Names846-BSM180C12P3C202

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