SQJ886EP-T1

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Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8 Dual
Base Product Number	SQJ886
Technology	MOSFET (Metal Oxide)
Series	Automotive, AEC-Q101, TrenchFET®
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 15.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
FET Feature	-
Package / Case	PowerPAK® SO-8 Dual
Vgs (Max)	±20V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	2922 pF @ 20 V
Power Dissipation (Max)	55W (Tc)
Other Names	SQJ886EP-T1_GE3-ND SQJ886EP-T1-GE3 SQJ886EP-T1-GE3-ND SQJ886EP-T1_GE3CT SQJ886EP-T1_GE3DKR SQJ886EP-T1_GE3TR

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