IGLD60R070D1AUMA3

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GANFET N-CH

NOVA Part#:

312-2299765-IGLD60R070D1AUMA3

Manufacturer:

Manufacturer Part No:

IGLD60R070D1AUMA3

Standard Package:

3,000

Technical Datasheet:

N-Channel 600 V 15A (Tc) 114W (Tc) Surface Mount PG-LSON-8-1

More Information
Category	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-LSON-8-1
Technology	GaNFET (Gallium Nitride)
Series	CoolGaN™
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1.6V @ 2.6mA
FET Feature	-
Package / Case	8-LDFN Exposed Pad
Vgs (Max)	-10V
FET Type	N-Channel
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 400 V
Power Dissipation (Max)	114W (Tc)
Other Names	448-IGLD60R070D1AUMA3DKR SP005557209 448-IGLD60R070D1AUMA3CT 448-IGLD60R070D1AUMA3TR