SCTH35N65G2V-7
SICFET N-CH 650V 45A H2PAK-7
NOVA Part#:
312-2289877-SCTH35N65G2V-7
Manufacturer:
Manufacturer Part No:
SCTH35N65G2V-7
Standard Package:
1,000
Technical Datasheet:
N-Channel 650 V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | STMicroelectronics | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | H2PAK-7 | |
| Base Product Number | SCTH35 | |
| Technology | SiCFET (Silicon Carbide) | |
| Series | - | |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V | |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 20A, 20V | |
| Vgs(th) (Max) @ Id | 3.2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 20 V | |
| FET Feature | - | |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | |
| Vgs (Max) | +22V, -10V | |
| FET Type | N-Channel | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 400 V | |
| Power Dissipation (Max) | 208W (Tc) | |
| Other Names | 497-SCTH35N65G2V-7DKR 497-SCTH35N65G2V-7TR 497-SCTH35N65G2V-7CT |
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