SI6562CDQ-T1-GE3

MOSFET N/P-CH 20V 6.7A 8-TSSOP
NOVA Part#:
303-2248821-SI6562CDQ-T1-GE3
Manufacturer:
Manufacturer Part No:
SI6562CDQ-T1-GE3
Standard Package:
3,000
Technical Datasheet:

Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP

More Information
CategoryTransistors - FETs, MOSFETs - Arrays
ManufacturerVishay Siliconix
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package 8-TSSOP
Base Product Number SI6562
Package / Case8-TSSOP (0.173", 4.40mm Width)
SeriesTrenchFET®
Current - Continuous Drain (Id) @ 25°C 6.7A, 6.1A
Rds On (Max) @ Id, Vgs 22mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
FET FeatureLogic Level Gate
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V
Power - Max 1.6W, 1.7W
Other NamesSI6562CDQT1GE3
SI6562CDQ-T1-GE3DKR
SI6562CDQ-T1-GE3CT
SI6562CDQ-T1-GE3TR

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