SI1926DL-T1-GE3

MOSFET 2N-CH 60V 0.37A SOT363

NOVA Part#:

303-2249279-SI1926DL-T1-GE3

Manufacturer:

Manufacturer Part No:

SI1926DL-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Mosfet Array 2 N-Channel (Dual) 60V 370mA 510mW Surface Mount SC-70-6

More Information
Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70-6
Base Product Number	SI1926
Package / Case	6-TSSOP, SC-88, SOT-363
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	370mA
Rds On (Max) @ Id, Vgs	1.4Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 10V
FET Feature	Logic Level Gate
FET Type	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	60V
Input Capacitance (Ciss) (Max) @ Vds	18.5pF @ 30V
Power - Max	510mW
Other Names	SI1926DL-T1-GE3CT SI1926DL-T1-GE3-ND SI1926DL-T1-GE3DKR SI1926DL-T1-GE3TR

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