EPC2101

GAN TRANS ASYMMETRICAL HALF BRID
NOVA Part#:
303-2247968-EPC2101
Manufacturer:
Manufacturer Part No:
EPC2101
Standard Package:
500
Technical Datasheet:

Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A - Surface Mount Die

More Information
CategoryTransistors - FETs, MOSFETs - Arrays
ManufacturerEPC
RoHS 1
PackagingTape & Reel (TR)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package Die
Package / CaseDie
SerieseGaN®
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 5V, 12nC @ 5V
FET FeatureGaNFET (Gallium Nitride)
FET Type2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)60V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 30V, 1200pF @ 30V
Power - Max -
Other Names917-1181-6
917-1181-2
917-1181-1

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