SI3585CDV-T1-GE3

MOSFET N/P-CH 20V 3.9A 6TSOP

NOVA Part#:

303-2361132-SI3585CDV-T1-GE3

Manufacturer:

Manufacturer Part No:

SI3585CDV-T1-GE3

Standard Package:

3,000

Technical Datasheet:

Mosfet Array N and P-Channel 20V 3.9A, 2.1A 1.4W, 1.3W Surface Mount 6-TSOP

More Information
Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Base Product Number	SI3585
Package / Case	SOT-23-6 Thin, TSOT-23-6
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	3.9A, 2.1A
Rds On (Max) @ Id, Vgs	58mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.8nC @ 10V
FET Feature	Logic Level Gate
FET Type	N and P-Channel
Drain to Source Voltage (Vdss)	20V
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 10V
Power - Max	1.4W, 1.3W
Other Names	SI3585CDV-T1-GE3-ND SI3585CDV-T1-GE3TR SI3585CDV-T1-GE3CT SI3585CDV-T1-GE3DKR

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