FDD3510H

MOSFET N/P-CH 80V 4.3/2.8A TO252

NOVA Part#:

303-2249846-FDD3510H

Manufacturer:

Manufacturer Part No:

FDD3510H

Standard Package:

2,500

Technical Datasheet:

Mosfet Array N and P-Channel, Common Drain 80V 4.3A, 2.8A 1.3W Surface Mount TO-252 (DPAK)

More Information
Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer	onsemi
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252 (DPAK)
Base Product Number	FDD3510
Package / Case	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Series	PowerTrench®
Current - Continuous Drain (Id) @ 25°C	4.3A, 2.8A
Rds On (Max) @ Id, Vgs	80mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
FET Feature	Logic Level Gate
FET Type	N and P-Channel, Common Drain
Drain to Source Voltage (Vdss)	80V
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 40V
Power - Max	1.3W
Other Names	FDD3510HTR 2156-FDD3510H-OS ONSONSFDD3510H FDD3510HCT FDD3510HDKR

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