SI4925BDY-T1-E3

MOSFET 2P-CH 30V 5.3A 8-SOIC

NOVA Part#:

303-2249427-SI4925BDY-T1-E3

Manufacturer:

Manufacturer Part No:

SI4925BDY-T1-E3

Standard Package:

2,500

Technical Datasheet:

Mosfet Array 2 P-Channel (Dual) 30V 5.3A 1.1W Surface Mount 8-SOIC

More Information
Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer	Vishay Siliconix
RoHS	1
Packaging	Tape & Reel (TR)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Base Product Number	SI4925
Package / Case	8-SOIC (0.154", 3.90mm Width)
Series	TrenchFET®
Current - Continuous Drain (Id) @ 25°C	5.3A
Rds On (Max) @ Id, Vgs	25mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
FET Feature	Logic Level Gate
FET Type	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.1W
Other Names	SI4925BDY-T1-E3TR SI4925BDY-T1-E3CT SI4925BDY-T1-E3DKR SI4925BDYT1E3

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