MJD31C1G

TRANS NPN 100V 3A IPAK

NOVA Part#:

301-2035959-MJD31C1G

Manufacturer:

Manufacturer Part No:

MJD31C1G

Standard Package:

Technical Datasheet:

Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.56 W Through Hole I-PAK

More Information
Category	Transistors - Bipolar (BJT) - Single
Manufacturer	onsemi
RoHS	1
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Base Product Number	MJD31
Series	-
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	50µA
Voltage - Collector Emitter Breakdown (Max)	100 V
Current - Collector (Ic) (Max)	3 A
Transistor Type	NPN
Power - Max	1.56 W
Other Names	MJD31C1G-ND MJD31C1GOS

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