2N5550
T-NPN SI- HIV AMP
NOVA Part#:
301-2039237-2N5550
Manufacturer:
Manufacturer Part No:
2N5550
Standard Package:
1
Technical Datasheet:
Bipolar (BJT) Transistor NPN 140 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | NTE Electronics, Inc | |
| RoHS | 1 | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-92 (TO-226) | |
| Series | - | |
| Package / Case | TO-226-3, TO-92-3 Long Body | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA | |
| Frequency - Transition | 300MHz | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Voltage - Collector Emitter Breakdown (Max) | 140 V | |
| Current - Collector (Ic) (Max) | 600 mA | |
| Transistor Type | NPN | |
| Power - Max | 625 mW | |
| Other Names | 2368-2N5550 |
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