2N6487

NPN EPITAXIAL SILICON TRANSISTOR
NOVA Part#:
301-2029375-2N6487
Manufacturer:
Manufacturer Part No:
2N6487
Standard Package:
1
Technical Datasheet:

Bipolar (BJT) Transistor NPN 60 V 15 A 5MHz 1.8 W Through Hole TO-220AB

More Information
CategoryTransistors - Bipolar (BJT) - Single
ManufacturerHarris Corporation
RoHS 1
Operating Temperature -65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package TO-220AB
Base Product Number 2N6487
Series-
Package / CaseTO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 5A, 15A
Frequency - Transition5MHz
Current - Collector Cutoff (Max)1mA
Voltage - Collector Emitter Breakdown (Max)60 V
Current - Collector (Ic) (Max) 15 A
Transistor TypeNPN
Power - Max 1.8 W
Other Names2156-2N6487
HARHAR2N6487

In stock Please contact us

Not the price you want? Fill the forms and we'll contact you ASAP.