MT3S111TU,LF
RF SIGE NPN BIPOLAR TRANSISTOR N
NOVA Part#:
302-2017671-MT3S111TU,LF
Manufacturer:
Manufacturer Part No:
MT3S111TU,LF
Standard Package:
3,000
Technical Datasheet:
RF Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| RoHS | 1 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | UFM | |
| Base Product Number | MT3S111 | |
| Series | - | |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz | |
| Package / Case | 3-SMD, Flat Lead | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V | |
| Frequency - Transition | 10GHz | |
| Gain | 12.5dB | |
| Voltage - Collector Emitter Breakdown (Max) | 6V | |
| Current - Collector (Ic) (Max) | 100mA | |
| Transistor Type | NPN | |
| Power - Max | 800mW | |
| Other Names | MT3S111TULFDKR MT3S111TU,LF(T MT3S111TU,LF(B MT3S111TULFCT MT3S111TULFTR |
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