NTE2018

IC-8 CHAN CMOS/TTL DR 18-PIN DIP

NOVA Part#:

298-2008993-NTE2018

Manufacturer:

Manufacturer Part No:

NTE2018

Standard Package:

Technical Datasheet:

Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 600mA - 1W Through Hole 18-PDIP

More Information
Category	Transistors - Bipolar (BJT) - Arrays
Manufacturer	NTE Electronics, Inc
RoHS	1
Operating Temperature	-20°C ~ 85°C (TA)
Mounting Type	Through Hole
Supplier Device Package	18-PDIP
Package / Case	18-DIP (0.300", 7.62mm)
Series	-
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Vce Saturation (Max) @ Ib, Ic	1.6V @ 350mA, 500A
Frequency - Transition	-
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	600mA
Transistor Type	8 NPN Darlington
Power - Max	1W
Other Names	2368-NTE2018

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