GB01SLT12-252

DIODE SILICON 1.2KV 1A TO252

NOVA Part#:

287-2355355-GB01SLT12-252

Manufacturer:

Manufacturer Part No:

GB01SLT12-252

Standard Package:

2,500

Technical Datasheet:

Diode Silicon Carbide Schottky 1200 V 1A Surface Mount TO-252

More Information
Category	Diodes - Rectifiers - Single
Manufacturer	GeneSiC Semiconductor
RoHS	1
Packaging	Tape & Reel (TR)
Speed	No Recovery Time > 500mA (Io)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Base Product Number	GB01SLT12
Series	SiC Schottky MPS™
Current - Average Rectified (Io)	1A
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature - Junction	-55°C ~ 175°C
Capacitance @ Vr, F	69pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr	2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 1 A
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Reverse Recovery Time (trr)	0 ns
Other Names	1242-1126-ND 1242-1126-6 1242-1126-2 1242-1126 1242-1126-1 GB01SLT12252

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